PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations
This paper reports recent progress in partially depleted (PD) SOI MOSFET modeling using a surface potential based approach. The new model is formulated within the framework of the latest industry standard bulk MOSFET model PSP. In addition to its physics-based formulation and scalability inherited from PSP, PSP-SOI captures SOI specific effects by including floating body simulation capability, parasitic body currents and capacitances. A nonlinear body resistance model is included for accurate characterization and simulation of body-contacted SOI devices. The PSP-SOI model has been verified using test data from 90 nm to 65 nm PD/SOI processes. © 2008 Elsevier Ltd. All rights reserved.
Wu, W; Li, X; Gildenblat, G; Workman, GO; Veeraraghavan, S; McAndrew, CC; van Langevelde, R; Smit, GDJ; Scholten, AJ; Klaassen, DBM; Watts, J
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