PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations

Journal Article (Journal Article)

This paper reports recent progress in partially depleted (PD) SOI MOSFET modeling using a surface potential based approach. The new model is formulated within the framework of the latest industry standard bulk MOSFET model PSP. In addition to its physics-based formulation and scalability inherited from PSP, PSP-SOI captures SOI specific effects by including floating body simulation capability, parasitic body currents and capacitances. A nonlinear body resistance model is included for accurate characterization and simulation of body-contacted SOI devices. The PSP-SOI model has been verified using test data from 90 nm to 65 nm PD/SOI processes. © 2008 Elsevier Ltd. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Wu, W; Li, X; Gildenblat, G; Workman, GO; Veeraraghavan, S; McAndrew, CC; van Langevelde, R; Smit, GDJ; Scholten, AJ; Klaassen, DBM; Watts, J

Published Date

  • January 1, 2009

Published In

Volume / Issue

  • 53 / 1

Start / End Page

  • 18 - 29

International Standard Serial Number (ISSN)

  • 0038-1101

Digital Object Identifier (DOI)

  • 10.1016/j.sse.2008.09.009

Citation Source

  • Scopus