PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations


Journal Article

This paper reports recent progress in partially depleted (PD) SOI MOSFET modeling using a surface potential based approach. The new model is formulated within the framework of the latest industry standard bulk MOSFET model PSP. In addition to its physics-based formulation and scalability inherited from PSP, PSP-SOI captures SOI specific effects by including floating body simulation capability, parasitic body currents and capacitances. A nonlinear body resistance model is included for accurate characterization and simulation of body-contacted SOI devices. The PSP-SOI model has been verified using test data from 90 nm to 65 nm PD/SOI processes. © 2008 Elsevier Ltd. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Wu, W; Li, X; Gildenblat, G; Workman, GO; Veeraraghavan, S; McAndrew, CC; van Langevelde, R; Smit, GDJ; Scholten, AJ; Klaassen, DBM; Watts, J

Published Date

  • January 1, 2009

Published In

Volume / Issue

  • 53 / 1

Start / End Page

  • 18 - 29

International Standard Serial Number (ISSN)

  • 0038-1101

Digital Object Identifier (DOI)

  • 10.1016/j.sse.2008.09.009

Citation Source

  • Scopus