A nonlinear body resistance model for accurate PD/SOI technology characterization

Conference Paper

We report a bias-dependent, nonlinear body resistance model suitable for accurate characterization of PD/SOI technology. This model is implemented in the surface potential based SOI MOSFET compact model PSP-SOI and experimentally verified for 65 nm PD/SOI technology node. ©2008 IEEE.

Full Text

Duke Authors

Cited Authors

  • Wu, W; Li, X; Gildenblat, G; Workman, GO; Veeraraghavan, S; Watts, J

Published Date

  • December 24, 2008

Published In

Start / End Page

  • 151 - 152

International Standard Serial Number (ISSN)

  • 1078-621X

International Standard Book Number 13 (ISBN-13)

  • 9781424419548

Digital Object Identifier (DOI)

  • 10.1109/SOI.2008.4656339

Citation Source

  • Scopus