Positive identification of the ubiquitous triangular defect on the (100) faces of vapor-grown diamond


Journal Article

Scanning tunneling microscopy and atomic force microscopy were used to index the faces and orientation of the sloping triangular defect which often appears on the {100} surfaces of chemical-vapor-deposited diamond. These features were confirmed to be 〈111〉 penetration twins which appear as sections of cubo-octahedra oriented with a 〈221〉' direction parallel to the "parent" crystal's {100} surface normal. Multiple twins of this type can give rise to the pentagonal structures usually attributed to simpler combinations of ordinary 〈111〉 twins. The ability to suppress this twin by proper choice of growth conditions is a major factor in controlling the morphology of vapor-grown diamond.

Full Text

Duke Authors

Cited Authors

  • Everson, MP; Tamor, MA; Scholl, D; Stoner, BR; Sahaida, SR; Bade, JP

Published Date

  • December 1, 1994

Published In

Volume / Issue

  • 75 / 1

Start / End Page

  • 169 - 172

International Standard Serial Number (ISSN)

  • 0021-8979

Digital Object Identifier (DOI)

  • 10.1063/1.355878

Citation Source

  • Scopus