Highly oriented diamond films on Si: growth, characterization, and devices

Published

Conference Paper

Highly oriented, (100) textured diamond films have been grown on single-crystal Si substrates via microwave plasma enhanced chemical vapor deposition. A multistep deposition process including bias-enhanced nucleation and textured growth was used to obtain smooth films consisting of epitaxial grains with only low-angle grain boundaries. Boron-doped layers were selectively deposited onto the surface of these oriented films and temperature-dependent Hall effect measurements indicated a 3 to 5 times improvement in hole mobility over polycrystalline films grown under similar conditions. Room temperature hole mobilities between 135 and 278 cm2/V-s were measured for the highly oriented samples as compared to 2 to 50 cm2/V-s for typical polycrystalline films. Grain size effects and a comparison between the transport properties of polycrystalline, highly oriented and homoepitaxial films will be discussed. Metal-oxide- semiconductor field-effect transistors were then fabricated on the highly oriented films and exhibited saturation and pinch-off of the channel current.

Duke Authors

Cited Authors

  • Stoner, BR; Malta, DM; Tessmer, AJ; Holmes, J; Dreifus, DL; Glass, RC; Sowers, A; Nemanich, RJ

Published Date

  • December 1, 1994

Published In

Volume / Issue

  • 2151 /

Start / End Page

  • 2 - 13

International Standard Serial Number (ISSN)

  • 0277-786X

International Standard Book Number 10 (ISBN-10)

  • 0819414468

International Standard Book Number 13 (ISBN-13)

  • 9780819414465

Citation Source

  • Scopus