Highly oriented diamond films on Si: growth, characterization, and devices
Highly oriented, (100) textured diamond films have been grown on single-crystal Si substrates via microwave plasma enhanced chemical vapor deposition. A multistep deposition process including bias-enhanced nucleation and textured growth was used to obtain smooth films consisting of epitaxial grains with only low-angle grain boundaries. Boron-doped layers were selectively deposited onto the surface of these oriented films and temperature-dependent Hall effect measurements indicated a 3 to 5 times improvement in hole mobility over polycrystalline films grown under similar conditions. Room temperature hole mobilities between 135 and 278 cm2/V-s were measured for the highly oriented samples as compared to 2 to 50 cm2/V-s for typical polycrystalline films. Grain size effects and a comparison between the transport properties of polycrystalline, highly oriented and homoepitaxial films will be discussed. Metal-oxide- semiconductor field-effect transistors were then fabricated on the highly oriented films and exhibited saturation and pinch-off of the channel current.
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- 5102 Atomic, molecular and optical physics
- 4009 Electronics, sensors and digital hardware
- 4006 Communications engineering
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Published In
ISSN
ISBN
Publication Date
Volume
Start / End Page
Related Subject Headings
- 5102 Atomic, molecular and optical physics
- 4009 Electronics, sensors and digital hardware
- 4006 Communications engineering