Cathodoluminescence studies of oriented diamond films


Journal Article

Transport properties of highly oriented diamong films have shown a marked improvement over random polycrystalline material. Scanning cathodoluminescence microscopy has been used to determine the type of defects present in oriented films and the way in which they are distributed in the layers. Our results show that undoped films contain significant nitrogen and silicon impurities, which are homogeneously distributed across individual diamond grains. In contrast, boron-doped layers are characterized by intense blue Band A and intrinsic edge emission: these signals arise from localized regions which correspond to grain boundaries. Between these regions, cathodoluminescence emissions are reduced and are similar to the undoped film; however, free-exciton emissions are increased. These observations are discussed in terms of film structure and impurity incorporation, and it is suggested that compensation of boron by nitrogen impurities may explain the absence of green Band A and bound-exciton-related emission for these films. © 1994.

Full Text

Duke Authors

Cited Authors

  • Buhaenko, DS; Southworth, P; Jenkins, CE; Ellis, PJ; Stoner, BR

Published Date

  • January 1, 1994

Published In

Volume / Issue

  • 3 / 4-6

Start / End Page

  • 926 - 931

International Standard Serial Number (ISSN)

  • 0925-9635

Digital Object Identifier (DOI)

  • 10.1016/0925-9635(94)90301-8

Citation Source

  • Scopus