Cathodoluminescence studies of oriented diamond films
Transport properties of highly oriented diamong films have shown a marked improvement over random polycrystalline material. Scanning cathodoluminescence microscopy has been used to determine the type of defects present in oriented films and the way in which they are distributed in the layers. Our results show that undoped films contain significant nitrogen and silicon impurities, which are homogeneously distributed across individual diamond grains. In contrast, boron-doped layers are characterized by intense blue Band A and intrinsic edge emission: these signals arise from localized regions which correspond to grain boundaries. Between these regions, cathodoluminescence emissions are reduced and are similar to the undoped film; however, free-exciton emissions are increased. These observations are discussed in terms of film structure and impurity incorporation, and it is suggested that compensation of boron by nitrogen impurities may explain the absence of green Band A and bound-exciton-related emission for these films. © 1994.
Duke Scholars
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- Applied Physics
- 5104 Condensed matter physics
- 4018 Nanotechnology
- 4016 Materials engineering
- 0912 Materials Engineering
- 0910 Manufacturing Engineering
- 0904 Chemical Engineering
Citation
Published In
DOI
ISSN
Publication Date
Volume
Issue
Start / End Page
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4018 Nanotechnology
- 4016 Materials engineering
- 0912 Materials Engineering
- 0910 Manufacturing Engineering
- 0904 Chemical Engineering