Modulating carrier and sideband coupling strengths in a standing-wave gate beam
Journal Article
© 2015 American Physical Society. We control the relative coupling strength of carrier and first-order motional sideband interactions of a trapped ion by placing it in a resonant optical standing wave. Our configuration uses the surface of a microfabricated chip trap as a mirror, avoiding technical challenges of in-vacuum optical cavities. Displacing the ion along the standing wave, we show a periodic suppression of the carrier and sideband transitions with the cycles for the two cases 180 out of phase with each other. This technique allows for the suppression of off-resonant carrier excitations when addressing the motional sidebands, and has applications in quantum simulation and quantum control. Using the standing-wave fringes, we measure the relative ion height as a function of applied electric field, allowing for a precise measurement of ion displacement and, combined with measured micromotion amplitudes, a validation of trap numerical models.
Full Text
Duke Authors
Cited Authors
- Delaubenfels, TE; Burkhardt, KA; Vittorini, G; Merrill, JT; Brown, KR; Amini, JM
Published Date
- December 10, 2015
Published In
Volume / Issue
- 92 / 6
Electronic International Standard Serial Number (EISSN)
- 1094-1622
International Standard Serial Number (ISSN)
- 1050-2947
Digital Object Identifier (DOI)
- 10.1103/PhysRevA.92.061402
Citation Source
- Scopus