Modulating carrier and sideband coupling strengths in a standing-wave gate beam

Journal Article

© 2015 American Physical Society. We control the relative coupling strength of carrier and first-order motional sideband interactions of a trapped ion by placing it in a resonant optical standing wave. Our configuration uses the surface of a microfabricated chip trap as a mirror, avoiding technical challenges of in-vacuum optical cavities. Displacing the ion along the standing wave, we show a periodic suppression of the carrier and sideband transitions with the cycles for the two cases 180 out of phase with each other. This technique allows for the suppression of off-resonant carrier excitations when addressing the motional sidebands, and has applications in quantum simulation and quantum control. Using the standing-wave fringes, we measure the relative ion height as a function of applied electric field, allowing for a precise measurement of ion displacement and, combined with measured micromotion amplitudes, a validation of trap numerical models.

Full Text

Duke Authors

Cited Authors

  • Delaubenfels, TE; Burkhardt, KA; Vittorini, G; Merrill, JT; Brown, KR; Amini, JM

Published Date

  • December 10, 2015

Published In

Volume / Issue

  • 92 / 6

Electronic International Standard Serial Number (EISSN)

  • 1094-1622

International Standard Serial Number (ISSN)

  • 1050-2947

Digital Object Identifier (DOI)

  • 10.1103/PhysRevA.92.061402

Citation Source

  • Scopus