Millimeter wave radiation-induced magnetoresistance oscillations in the high quality GaAs/AlGaAs 2D electron system under bichromatic excitation

Published

Journal Article

© 2017 American Physical Society. Millimeter wave radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D electron system under bichromatic excitation in order to study the evolution of the oscillatory diagonal magnetoresistance, Rxx as the millimeter wave intensity is changed systematically for various frequency combinations. The results indicate that at low magnetic fields, the lower frequency millimeter wave excitation sets the observed Rxx response, as the higher frequency millimeter wave component determines the Rxx response at higher magnetic fields. The observations are qualitatively explained in terms of the order of the involved transitions. The results are also modeled using the radiation-driven electron orbit theory.

Full Text

Cited Authors

  • Gunawardana, B; Liu, HC; Samaraweera, RL; Heimbeck, MS; Everitt, HO; Iñarrea, J; Reichl, C; Wegscheider, W; Mani, RG

Published Date

  • May 3, 2017

Published In

Volume / Issue

  • 95 / 19

Electronic International Standard Serial Number (EISSN)

  • 2469-9969

International Standard Serial Number (ISSN)

  • 2469-9950

Digital Object Identifier (DOI)

  • 10.1103/PhysRevB.95.195304

Citation Source

  • Scopus