Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling

Published

Conference Paper

Spontaneous emission rate in nitrides was enhanced. The degree of enhancement increased with increasing film thickness and decreasing GaN cap layer thickness. Enhancement factors of almost 100 were indicated by dramatically accelerated TRPL decay at a frequency corresponding to the SP resonance.

Duke Authors

Cited Authors

  • Neogi, A; Lee, CW; Everitt, HO; Kuroda, T; Tackeuchi, A; Yablonovitch, E

Published Date

  • January 1, 2002

Published In

  • Conference on Quantum Electronics and Laser Science (Qels) Technical Digest Series

Volume / Issue

  • 74 /

Start / End Page

  • 258 - 259

Citation Source

  • Scopus