Temperature dependent visible photoluminescence of Eudoped GaN on silicon
Published
Conference Paper
A spectroscopic study of Eu-doped GaN grown on silicon by solid state molecular beam epitaxy is presented. The temperature dependence of the continuous-wave and time-resolved luminescence properties reveals details about the energy transfer rates and thermal activation energies. © 2003 Optical Society of America.
Duke Authors
Cited Authors
- Lee, CW; Everitt, HO; Javada, JM; Steckl, AJ
Published Date
- January 1, 2003
Published In
Volume / Issue
- 88 /
Start / End Page
- 999 - 1000
International Standard Serial Number (ISSN)
- 1094-5695
Citation Source
- Scopus