Temperature dependent visible photoluminescence of Eudoped GaN on silicon


Conference Paper

A spectroscopic study of Eu-doped GaN grown on silicon by solid state molecular beam epitaxy is presented. The temperature dependence of the continuous-wave and time-resolved luminescence properties reveals details about the energy transfer rates and thermal activation energies. © 2003 Optical Society of America.

Duke Authors

Cited Authors

  • Lee, CW; Everitt, HO; Javada, JM; Steckl, AJ

Published Date

  • January 1, 2003

Published In

Volume / Issue

  • 88 /

Start / End Page

  • 999 - 1000

International Standard Serial Number (ISSN)

  • 1094-5695

Citation Source

  • Scopus