Effects of strain on carrier recombination in GaN quantum dots

Published

Conference Paper

Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.

Duke Authors

Cited Authors

  • Neogi, A; Everitt, HO; Morkoç, H; Kuroda, T; Tackeuchi, A

Published Date

  • December 1, 2003

Published In

  • Conference on Quantum Electronics and Laser Science (Qels) Technical Digest Series

Volume / Issue

  • 89 /

Citation Source

  • Scopus