Skip to main content

Understanding the trade-offs of device, circuit and application in ReRAM-based neuromorphic computing systems

Publication ,  Conference
Yan, B; Liu, C; Liu, X; Chen, Y; Li, H
Published in: Technical Digest - International Electron Devices Meeting, IEDM
January 23, 2018

Resistive memory (ReRAM) features nonvolatile storage, high resistance, dense structure, and analogy to the matrix-vector multiplication operation. These characteristics demonstrate the great potential of ReRAM in the development of neuromorphic computing systems. In this paper, we show the importance of the comprehensive understanding across the device, circuit, and application levels in ReRAM-based neuromorphic system, through the discussion of three major problems-weight mapping, reliability, and system integration.

Duke Scholars

Published In

Technical Digest - International Electron Devices Meeting, IEDM

DOI

ISSN

0163-1918

ISBN

9781538635599

Publication Date

January 23, 2018

Start / End Page

11.4.1 / 11.4.4
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Yan, B., Liu, C., Liu, X., Chen, Y., & Li, H. (2018). Understanding the trade-offs of device, circuit and application in ReRAM-based neuromorphic computing systems. In Technical Digest - International Electron Devices Meeting, IEDM (pp. 11.4.1-11.4.4). https://doi.org/10.1109/IEDM.2017.8268371
Yan, B., C. Liu, X. Liu, Y. Chen, and H. Li. “Understanding the trade-offs of device, circuit and application in ReRAM-based neuromorphic computing systems.” In Technical Digest - International Electron Devices Meeting, IEDM, 11.4.1-11.4.4, 2018. https://doi.org/10.1109/IEDM.2017.8268371.
Yan B, Liu C, Liu X, Chen Y, Li H. Understanding the trade-offs of device, circuit and application in ReRAM-based neuromorphic computing systems. In: Technical Digest - International Electron Devices Meeting, IEDM. 2018. p. 11.4.1-11.4.4.
Yan, B., et al. “Understanding the trade-offs of device, circuit and application in ReRAM-based neuromorphic computing systems.” Technical Digest - International Electron Devices Meeting, IEDM, 2018, pp. 11.4.1-11.4.4. Scopus, doi:10.1109/IEDM.2017.8268371.
Yan B, Liu C, Liu X, Chen Y, Li H. Understanding the trade-offs of device, circuit and application in ReRAM-based neuromorphic computing systems. Technical Digest - International Electron Devices Meeting, IEDM. 2018. p. 11.4.1-11.4.4.

Published In

Technical Digest - International Electron Devices Meeting, IEDM

DOI

ISSN

0163-1918

ISBN

9781538635599

Publication Date

January 23, 2018

Start / End Page

11.4.1 / 11.4.4