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Design and Implementation of a 4Kb STT-MRAM with Innovative 200nm Nano-ring Shaped MTJ

Publication ,  Conference
Li, Z; Bi, X; Li, HH; Chen, Y; Qin, J; Guo, P; Kong, W; Zhan, W; Han, X; Zhang, H; Wang, L; Wu, G; Wu, H
Published in: Proceedings of the International Symposium on Low Power Electronics and Design
August 8, 2016

Programmability is as a severe challenge in development of spin-transfer torque magnetic random access memory (STT-MRAM). Theoretical analysis have indicated that nano-ring shaped magnetic tunneling junction (NR-MTJ) can achieve lower write current and higher write reliability compared to conventional elliptical-shaped MTJ (E-MTJ). In this work, we successfully patterned the NR-MTJ with 200nm outer diameter and 120nm inner diameter in commercial manufacturing facility, designed and fabricated a 4Kb STT-MRAM test chip with NR-MTJs. Testing results demonstrated successful read and write functionalities of our chip, and proved the theocratically-predicted electrical properties of NR-MTJs.

Duke Scholars

Published In

Proceedings of the International Symposium on Low Power Electronics and Design

DOI

ISSN

1533-4678

ISBN

9781450341851

Publication Date

August 8, 2016

Start / End Page

4 / 9
 

Citation

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MLA
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Li, Z., Bi, X., Li, H. H., Chen, Y., Qin, J., Guo, P., … Wu, H. (2016). Design and Implementation of a 4Kb STT-MRAM with Innovative 200nm Nano-ring Shaped MTJ. In Proceedings of the International Symposium on Low Power Electronics and Design (pp. 4–9). https://doi.org/10.1145/2934583.2934611
Li, Z., X. Bi, H. H. Li, Y. Chen, J. Qin, P. Guo, W. Kong, et al. “Design and Implementation of a 4Kb STT-MRAM with Innovative 200nm Nano-ring Shaped MTJ.” In Proceedings of the International Symposium on Low Power Electronics and Design, 4–9, 2016. https://doi.org/10.1145/2934583.2934611.
Li Z, Bi X, Li HH, Chen Y, Qin J, Guo P, et al. Design and Implementation of a 4Kb STT-MRAM with Innovative 200nm Nano-ring Shaped MTJ. In: Proceedings of the International Symposium on Low Power Electronics and Design. 2016. p. 4–9.
Li, Z., et al. “Design and Implementation of a 4Kb STT-MRAM with Innovative 200nm Nano-ring Shaped MTJ.” Proceedings of the International Symposium on Low Power Electronics and Design, 2016, pp. 4–9. Scopus, doi:10.1145/2934583.2934611.
Li Z, Bi X, Li HH, Chen Y, Qin J, Guo P, Kong W, Zhan W, Han X, Zhang H, Wang L, Wu G, Wu H. Design and Implementation of a 4Kb STT-MRAM with Innovative 200nm Nano-ring Shaped MTJ. Proceedings of the International Symposium on Low Power Electronics and Design. 2016. p. 4–9.

Published In

Proceedings of the International Symposium on Low Power Electronics and Design

DOI

ISSN

1533-4678

ISBN

9781450341851

Publication Date

August 8, 2016

Start / End Page

4 / 9