Design and Implementation of a 4Kb STT-MRAM with Innovative 200nm Nano-ring Shaped MTJ

Conference Paper

Programmability is as a severe challenge in development of spin-transfer torque magnetic random access memory (STT-MRAM). Theoretical analysis have indicated that nano-ring shaped magnetic tunneling junction (NR-MTJ) can achieve lower write current and higher write reliability compared to conventional elliptical-shaped MTJ (E-MTJ). In this work, we successfully patterned the NR-MTJ with 200nm outer diameter and 120nm inner diameter in commercial manufacturing facility, designed and fabricated a 4Kb STT-MRAM test chip with NR-MTJs. Testing results demonstrated successful read and write functionalities of our chip, and proved the theocratically-predicted electrical properties of NR-MTJs.

Full Text

Duke Authors

Cited Authors

  • Li, Z; Bi, X; Li, HH; Chen, Y; Qin, J; Guo, P; Kong, W; Zhan, W; Han, X; Zhang, H; Wang, L; Wu, G; Wu, H

Published Date

  • August 8, 2016

Published In

Start / End Page

  • 4 - 9

International Standard Serial Number (ISSN)

  • 1533-4678

International Standard Book Number 13 (ISBN-13)

  • 9781450341851

Digital Object Identifier (DOI)

  • 10.1145/2934583.2934611

Citation Source

  • Scopus