The X-ray quantum efficiency measurement of high resistivity CCDs

Published

Journal Article

The CCD247 is the second generation of high-resistivity device to be manufactured in e2v technologies plc development programme. Intended for infrared astronomy, the latest devices are fabricated on high resistivity (∼8 kΩ cm) bulk silicon, allowing for a greater device thickness whilst maintaining full depletion when 'thinned' to a thickness of 150 μm. In the case of the front illuminated variant, depletion of up to 300 μm is achievable by applying a gate to substrate potential of up to 120 V, whilst retaining adequate spectral performance. The increased depletion depth of high-resistivity CCDs greatly improves the quantum efficiency (QE) for incident X-ray photons of energies above 5 keV, making such a device beneficial in future X-ray astronomy missions and other applications. Here we describe the experimental setup and present results of X-ray QE measurements taken in the energy range 2-20 keV for a front illuminated CCD247, showing QE in excess of 80% at 10 keV. Results for the first generation CCD217 and swept-charge device (1500 Ω cm epitaxial silicon) are also presented. © 2009 Elsevier B.V. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Murray, NJ; Holland, AD; Smith, DR; Gow, JP; Pool, PJ; Burt, DJ

Published Date

  • June 1, 2009

Published In

Volume / Issue

  • 604 / 1-2

Start / End Page

  • 180 - 182

International Standard Serial Number (ISSN)

  • 0168-9002

Digital Object Identifier (DOI)

  • 10.1016/j.nima.2009.01.052

Citation Source

  • Scopus