Investigation of the pulsed-IV degradation mechanism of GaN-HEMT under high temperature storage tests

Published

Conference Paper

© 2018 IEEE. The purpose of this study is to investigate the physical mechanism of pulsed-IV degradation under high temperature storage tests. Using the measurements of the pulsed S-parameters immediately after the voltage stress was applied to the GaN-HEMT, we carried out the delay time analysis. As a result, we found that the so-called 'virtual gate' region extended toward the drain electrode due to high temperature storage. From this result, we concluded that the electron tunnel injection probability at the gate edge increased and degraded the pulsed-IV characteristics.

Full Text

Duke Authors

Cited Authors

  • Tateno, Y; Kurachi, Y; Yamamoto, H; Nakabayashi, T

Published Date

  • May 25, 2018

Published In

Volume / Issue

  • 2018-March /

Start / End Page

  • PWB.21 - PWB.25

International Standard Serial Number (ISSN)

  • 1541-7026

International Standard Book Number 13 (ISBN-13)

  • 9781538654798

Digital Object Identifier (DOI)

  • 10.1109/IRPS.2018.8353705

Citation Source

  • Scopus