Notice of Removal: Dissolution of oxygen precipitate nuclei in N-type CZ Si wafers to improve their material quality: Experimental results
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Sopori, B; Devayajanam, S; Basnyat, P; Tan, T; Upadhyaya, A; Rohatgi, A; Xu, H
Published in: 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
January 1, 2017
We present experimental results that show oxygen related precipitate nuclei (OPN) present in P-doped, N type, CZ wafers can be dissolved using a Flash Annealing process yielding very high quality wafers for high efficiency solar cells. Flash annealing consists of heating a wafer in an optical furnace to temperatures between 1150 °C and 1250°C for a short time. This process step produces a large increase in the minority carrier lifetime (MCLT) and homogenizes each wafer. All wafers, from different axial locations of an ingot, reach nearly the same high value of MCLT. The OPN dissolution is confirmed by Oxygen analysis and injection level dependence of MCLT.
Duke Scholars
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2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
DOI
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9781509056057
Publication Date
January 1, 2017
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1 / 3
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Sopori, B., Devayajanam, S., Basnyat, P., Tan, T., Upadhyaya, A., Rohatgi, A., & Xu, H. (2017). Notice of Removal: Dissolution of oxygen precipitate nuclei in N-type CZ Si wafers to improve their material quality: Experimental results. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1–3). https://doi.org/10.1109/PVSC.2017.8366188
Sopori, B., S. Devayajanam, P. Basnyat, T. Tan, A. Upadhyaya, A. Rohatgi, and H. Xu. “Notice of Removal: Dissolution of oxygen precipitate nuclei in N-type CZ Si wafers to improve their material quality: Experimental results.” In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, 1–3, 2017. https://doi.org/10.1109/PVSC.2017.8366188.
Sopori B, Devayajanam S, Basnyat P, Tan T, Upadhyaya A, Rohatgi A, et al. Notice of Removal: Dissolution of oxygen precipitate nuclei in N-type CZ Si wafers to improve their material quality: Experimental results. In: 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017. p. 1–3.
Sopori, B., et al. “Notice of Removal: Dissolution of oxygen precipitate nuclei in N-type CZ Si wafers to improve their material quality: Experimental results.” 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, 2017, pp. 1–3. Scopus, doi:10.1109/PVSC.2017.8366188.
Sopori B, Devayajanam S, Basnyat P, Tan T, Upadhyaya A, Rohatgi A, Xu H. Notice of Removal: Dissolution of oxygen precipitate nuclei in N-type CZ Si wafers to improve their material quality: Experimental results. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017. p. 1–3.
Published In
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
DOI
ISBN
9781509056057
Publication Date
January 1, 2017
Start / End Page
1 / 3