Dissolution of oxygen precipitate nuclei in N-type CZ Si wafers to improve their material quality: Experimental results

Published

Conference Paper

© 2017 IEEE. We present experimental results that show oxygen related precipitate nuclei (OPN) present in P-doped, N type, CZ wafers can be dissolved using a Flash Annealing process yielding very high quality wafers for high efficiency solar cells. Flash annealing consists of heating a wafer in an optical furnace to temperatures between 1150 °C and 1250°C for a short time. This process step produces a large increase in the minority carrier lifetime (MCLT) and homogenizes each wafer. All wafers, from different axial locations of an ingot, reach nearly the same high value of MCLT. The OPN dissolution is confirmed by Oxygen analysis and injection level dependence of MCLT.

Full Text

Duke Authors

Cited Authors

  • Sopori, B; Devayajanam, S; Basnyat, P; Tan, T; Upadhyaya, A; Rohatgi, A; Xu, H

Published Date

  • January 1, 2017

Published In

  • 2017 Ieee 44th Photovoltaic Specialist Conference, Pvsc 2017

Start / End Page

  • 1 - 3

International Standard Book Number 13 (ISBN-13)

  • 9781509056057

Digital Object Identifier (DOI)

  • 10.1109/PVSC.2017.8366188

Citation Source

  • Scopus