Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

Published

Journal Article

© 2016 CIOMP. All rights reserved. The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly, InAs plasmonic disks exhibit a strong nonlinear response arising from electric field-induced intervalley scattering, resulting in a reduced carrier mobility thereby damping the plasmonic response. We demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers, including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast terahertz (THz) optics and for passive protection of sensitive electromagnetic devices.

Full Text

Cited Authors

  • Seren, HR; Zhang, J; Keiser, GR; Maddox, SJ; Zhao, X; Fan, K; Bank, SR; Zhang, X; Averitt, RD

Published Date

  • January 1, 2016

Published In

Volume / Issue

  • 5 /

Electronic International Standard Serial Number (EISSN)

  • 2047-7538

International Standard Serial Number (ISSN)

  • 2095-5545

Digital Object Identifier (DOI)

  • 10.1038/lsa.2016.78

Citation Source

  • Scopus