Study of the dependence of Ga 0.47 In 0.53 As/Al x In 1-x As power HEMT breakdown voltage on schottky layer design and device layout

Published

Conference Paper

Full Text

Duke Authors

Cited Authors

  • Brown, JJ; Brown, AS; Rosenbaum, SE; Schmitz, AS; Matloubian, M; Larson, LE; Melendes, MA; Thompson, MA

Published Date

  • January 1, 1993

Published In

Volume / Issue

  • Part F146191 /

International Standard Serial Number (ISSN)

  • 1548-3770

Digital Object Identifier (DOI)

  • 10.1109/DRC.1993.1009579

Citation Source

  • Scopus