Monolithic device models
© 2009 by Taylor & Francis Group, LLC. The bipolar junction transistor (BJT) is historically the ﬁrst solid-state analog ampliﬁer and digital switch, and formed the basis of integrated circuits (ICs) in the 1970s. Starting in the early 1980s, the MOSFET had gradually taken over, particularly for main stream digital ICs. However, in the 1990s, the invention of silicon-germanium base heterojunction bipolar transistor (SiGe HBT) brought the bipolar transistor back into high-volume commercial production, mainly for the now widespread wireless and wire line communications applications. Today, SiGe HBTs are used to design radio-frequency (RF) ICs and systems for cell phones, wireless local area network (WLAN), automobile collision avoidanc radar, wireless distribution of cable television, millimeter wave radios, and many more applications, due to its outstanding high-frequency performance and ability to integrate with CMOS for realizing digital, analog, and RF functions on the same chip. Below we ﬁrst introduce the basic concepts of BJT using a historically important equivalent circuit model, the Ebers-Moll model. Then the Gummel-Poon model is introduced, as it is widely used for computer-aided design, and is the basis of modern BJT models like the VBIC, Mextram, and HICUM models. Current gain, high-current phenomena, fabrication technologies, and SiGe HBTs are then discussed.
Wilamowski, BM; Niu, G; Choma, J; Long, SI; Nguyen, NM; Brooke, MA
Start / End Page
International Standard Book Number 10 (ISBN-10)
International Standard Book Number 13 (ISBN-13)