In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices

Conference Paper

We demonstrate a post-growth in-situ chlorine passivation for suppressing surface-dominant transport in Si nanowires (SiNWs). The leakage current of bridged SiNWs suppressed more than five orders of magnitude as a result of chlorine passivation while the shape and structural properties of the bridging NWs remain unaffected by the post-growth in-situ HCl passivation. The chlorine passivated SiNW surfaces were found to be beneficial to enhance the high immunity to environmental degradation. © 2010 SPIE.

Full Text

Duke Authors

Cited Authors

  • Kim, JY; Kwon, MK; Logeeswaran, VJ; Grego, S; Islam, MS

Published Date

  • October 26, 2010

Published In

Volume / Issue

  • 7768 /

International Standard Serial Number (ISSN)

  • 0277-786X

International Standard Book Number 13 (ISBN-13)

  • 9780819482648

Digital Object Identifier (DOI)

  • 10.1117/12.861607

Citation Source

  • Scopus