In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices
Conference Paper
We demonstrate a post-growth in-situ chlorine passivation for suppressing surface-dominant transport in Si nanowires (SiNWs). The leakage current of bridged SiNWs suppressed more than five orders of magnitude as a result of chlorine passivation while the shape and structural properties of the bridging NWs remain unaffected by the post-growth in-situ HCl passivation. The chlorine passivated SiNW surfaces were found to be beneficial to enhance the high immunity to environmental degradation. © 2010 SPIE.
Full Text
Duke Authors
Cited Authors
- Kim, JY; Kwon, MK; Logeeswaran, VJ; Grego, S; Islam, MS
Published Date
- October 26, 2010
Published In
Volume / Issue
- 7768 /
International Standard Serial Number (ISSN)
- 0277-786X
International Standard Book Number 13 (ISBN-13)
- 9780819482648
Digital Object Identifier (DOI)
- 10.1117/12.861607
Citation Source
- Scopus