Capping Layers to Improve the Electrical Stress Stability of MoS2 Transistors.

Journal Article (Journal Article)

Two-dimensional (2D) materials offer exciting possibilities for numerous applications, including next-generation sensors and field-effect transistors (FETs). With their atomically thin form factor, it is evident that molecular activity at the interfaces of 2D materials can shape their electronic properties. Although much attention has focused on engineering the contact and dielectric interfaces in 2D material-based transistors to boost their drive current, less is understood about how to tune these interfaces to improve the long-term stability of devices. In this work, we evaluated molybdenum disulfide (MoS2 ) transistors under continuous electrical stress for periods lasting up to several days. During stress in ambient air, we observed temporary threshold voltage shifts that increased at higher gate voltages or longer stress durations, correlating to changes in interface trap states (ΔN it ) of up to 1012 cm-2 . By modifying the device to include either SU-8 or Al2 O3 as an additional dielectric capping layer on top of the MoS2 channel, we were able to effectively reduce or even eliminate this unstable behavior. However, we found this encapsulating material must be selected carefully, as certain choices actually amplified instability or compromised device yield, as was the case for Al2 O3 , which reduced yield by 20% versus all other capping layers. Further refining these strategies to preserve stability in 2D devices will be crucial for their continued integration into future technologies.

Full Text

Duke Authors

Cited Authors

  • Doherty, JL; Noyce, SG; Cheng, Z; Abuzaid, H; Franklin, AD

Published Date

  • August 2020

Published In

Volume / Issue

  • 12 / 31

Start / End Page

  • 35698 - 35706

PubMed ID

  • 32805797

Pubmed Central ID

  • 32805797

Electronic International Standard Serial Number (EISSN)

  • 1944-8252

International Standard Serial Number (ISSN)

  • 1944-8244

Digital Object Identifier (DOI)

  • 10.1021/acsami.0c08647

Language

  • eng