Electrical doping in halide perovskites

Journal Article (Review;Journal)

Electrical doping (that is, intentional engineering of carrier density) underlies most energy-related and optoelectronic semiconductor technologies. However, for the intensely studied halide perovskite family of semiconductors, reliable doping remains challenging, owing to, for example, compensation from and facile migration of intrinsic defects. In this Review, we first discuss the underlying fundamentals of semiconductor doping and then investigate different doping strategies in halide perovskites, including intrinsic defect, extrinsic defect and charge transfer doping, from an experimental as well as a theoretical perspective. We outline the advantages and pitfalls of different characterization techniques to assess doping and examine the impact of doping on optoelectronic properties. Finally, we highlight challenges that need to be overcome to gain control over the electronic properties of this important material class.

Full Text

Duke Authors

Cited Authors

  • Euvrard, J; Yan, Y; Mitzi, DB

Published Date

  • June 1, 2021

Published In

Volume / Issue

  • 6 / 6

Start / End Page

  • 531 - 549

Electronic International Standard Serial Number (EISSN)

  • 2058-8437

Digital Object Identifier (DOI)

  • 10.1038/s41578-021-00286-z

Citation Source

  • Scopus