One-dimensional edge contact to encapsulated MoS2 with a superconductor

Journal Article (Journal Article)

Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material’s electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 K, which has ramifications for future fabrication recipes.

Full Text

Duke Authors

Cited Authors

  • Seredinski, A; Arnault, EG; Costa, VZ; Zhao, L; Larson, TFQ; Watanabe, K; Taniguchi, T; Amet, F; Newaz, AKM; Finkelstein, G

Published Date

  • April 1, 2021

Published In

Volume / Issue

  • 11 / 4

Electronic International Standard Serial Number (EISSN)

  • 2158-3226

Digital Object Identifier (DOI)

  • 10.1063/5.0045009

Citation Source

  • Scopus