Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration?

Journal Article (Journal Article)

Low-temperature reflectance spectra of a series of Si-doped GaN epilayers with different doping concentrations grown on sapphire by metal-organic chemical vapour deposition were measured. In addition to the excitonic polariton resonance structures at the band edge, interference oscillating patterns were observed in the energy region well below the band gap. The amplitudes of these oscillation patterns show a distinct dependence on the doping concentrations of the samples. From the thin-film optical interference principle, an approach connecting the amplitude of the interference oscillations and the impurity scattering was established. Good agreement between experiment and theory is achieved. © 2012 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Zheng, CC; Xu, SJ; Zhang, F; Ning, JQ; Zhao, DG; Yang, H; Che, CM

Published Date

  • November 5, 2012

Published In

Volume / Issue

  • 101 / 19

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.4766188

Citation Source

  • Scopus