Realization of III-V Semiconductor Periodic Nanostructures by Laser Direct Writing Technique.

Journal Article (Journal Article)

In this paper, we demonstrated the fabrication of one-dimensional (1D) and two-dimensional (2D) periodic nanostructures on III-V GaAs substrates utilizing laser direct writing (LDW) technique. Metal thin films (Ti) and phase change materials (Ge2 Sb2 Te5 (GST) and Ge2 Sb1.8 Bi0.2 Te5 (GSBT)) were chosen as photoresists to achieve small feature sizes of semiconductor nanostructures. A minimum feature size of about 50 nm about a quarter of the optical diffraction limit was obtained on the photoresists, and 1D III-V semiconductor nanolines with a minimum width of 150 nm were successfully acquired on the GaAs substrate which was smaller than the best results acquired on Si substrate ever reported. 2D nanosquare holes were fabricated as well by using Ti thin film as the photoresist, with a side width of about 200 nm, but the square holes changed to a rectangle shape when GST or GSBT was employed as the photoresist, which mainly resulted from the interaction of two cross-temperature fields induced by two scanning laser beams. The interacting mechanism of different photoresists in preparing periodic nanostructures with the LDW technique was discussed in detail.

Full Text

Duke Authors

Cited Authors

  • Huang, Y-Q; Huang, R; Liu, Q-L; Zheng, C-C; Ning, J-Q; Peng, Y; Zhang, Z-Y

Published Date

  • December 2017

Published In

Volume / Issue

  • 12 / 1

Start / End Page

  • 12 -

PubMed ID

  • 28058648

Pubmed Central ID

  • PMC5216013

Electronic International Standard Serial Number (EISSN)

  • 1556-276X

International Standard Serial Number (ISSN)

  • 1931-7573

Digital Object Identifier (DOI)

  • 10.1186/s11671-016-1780-3


  • eng