Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique

Conference Paper

Low resistance ohmic contacts have been successfully fabricated on n-GaSb layers grown by MBE on semi-insulating (SI) GaAs substrates using the Interfacial Misfit Dislocation (IMF) technique. Although intended for photovoltaic applications, the results are applicable to many antimonide-based devices. The IMF technique enables the growth of epitaxial GaSb layers on semi-insulating GaAs substrates resulting in vertical current confinement not possible on unintentionally doped ∼ 1e17 cm-3 p-doped bulk GaSb. Results for low resistance ohmic contacts using NiGeAu, PdGeAu, GeAuNi and GeAuPd metallizations for various temperatures are reported. Specific transfer resistances down to 0.12 Ω-mm and specific contact resistances of < 2e-6 Ω-cm2 have been observed. © 2013 Copyright SPIE.

Full Text

Duke Authors

Cited Authors

  • Rahimi, N; Aragon, AA; Romero, OS; Kim, DM; Traynor, NBJ; Rotter, TJ; Balakrishnan, G; Mukherjee, SD; Lester, LF

Published Date

  • June 10, 2013

Published In

Volume / Issue

  • 8620 /

International Standard Serial Number (ISSN)

  • 0277-786X

International Standard Book Number 13 (ISBN-13)

  • 9780819493897

Digital Object Identifier (DOI)

  • 10.1117/12.2003392

Citation Source

  • Scopus