GaAs optoelectronic smart pixel arrays

Conference Paper

With the development of relatively low power-surface emitting and modulating devices, the application of GaAs based monolithic optoelectronic integrated circuits (OEICs) to the realization of smart pixel arrays has become attractive. This paper describes a feasibility demonstration of a two dimensional, GaAs based, monolithically integrated smart pixel OEIC. Issues related to the appropriate choice of components comprising the OEIC, and the ultimate cost competitiveness of this approach to smart pixels will be explored. The OEIC demonstrated at Honeywell consists of an 8 × 8 array of pixels, with each pixel containing a vertically emitting LED, an ion implanted photoconducting detector and an 18-feet GaAs MESFET circuit which performs memory, thresholding, amplification and LED drive functions. A schematic design of the chip is shown. In summary, our long term directions will involve the monolithic integration of VCSELs, either p-i-n or photoconducting detectors, and the Complementary Heterostructure Field Effect Transistor I.C. technology. An approach to the monolithic integration of these structure is illustrated.

Duke Authors

Cited Authors

  • Hibbs-Brenner, MK; Mukherjee, SD; Grung, BL; Skogen, J

Published Date

  • December 1, 1993

Published In

  • Conference Proceedings Lasers and Electro Optics Society Annual Meeting

Start / End Page

  • 672 - 673

International Standard Book Number 10 (ISBN-10)

  • 0780312635

Citation Source

  • Scopus