Monolithic integration of singlemode AIGaAs optical waveguides at 830 nm with GaAs E/D-Mesfets using planar multifunctional epistructure (PME) approach
Journal Article (Journal Article)
Singlemode AIGaAs optical waveguides at 830 nm have been monolithically fabricated together with ion-implanted E- and D-mode GaAs MESFETs. The waveguide TE and TM propagation losses are as low as 1·5 dB/cm with < −25 dB depolarisation. E- and D-mode FETs have VT = 0·26 and − 0·20 V, and gm = 160 and 230 mS/mm, respectively. © 1991, The Institution of Electrical Engineers. All rights reserved.
Full Text
Duke Authors
Cited Authors
- Mukherjee, SD; Skogen, JD; Hibbs-Brenner, MK; Sullivan, AT; Kalweit, EL; Walterson, RA
Published Date
- November 21, 1991
Published In
Volume / Issue
- 27 / 24
Start / End Page
- 2281 - 2283
International Standard Serial Number (ISSN)
- 0013-5194
Digital Object Identifier (DOI)
- 10.1049/el:19911410
Citation Source
- Scopus