Monolithic integration of singlemode AIGaAs optical waveguides at 830 nm with GaAs E/D-Mesfets using planar multifunctional epistructure (PME) approach
Singlemode AIGaAs optical waveguides at 830 nm have been monolithically fabricated together with ion-implanted E- and D-mode GaAs MESFETs. The waveguide TE and TM propagation losses are as low as 1·5 dB/cm with < −25 dB depolarisation. E- and D-mode FETs have VT = 0·26 and − 0·20 V, and gm = 160 and 230 mS/mm, respectively. © 1991, The Institution of Electrical Engineers. All rights reserved.
Mukherjee, SD; Skogen, JD; Hibbs-Brenner, MK; Sullivan, AT; Kalweit, EL; Walterson, RA
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