Monolithic integration of singlemode AIGaAs optical waveguides at 830 nm with GaAs E/D-Mesfets using planar multifunctional epistructure (PME) approach

Journal Article (Journal Article)

Singlemode AIGaAs optical waveguides at 830 nm have been monolithically fabricated together with ion-implanted E- and D-mode GaAs MESFETs. The waveguide TE and TM propagation losses are as low as 1·5 dB/cm with < −25 dB depolarisation. E- and D-mode FETs have VT = 0·26 and − 0·20 V, and gm = 160 and 230 mS/mm, respectively. © 1991, The Institution of Electrical Engineers. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Mukherjee, SD; Skogen, JD; Hibbs-Brenner, MK; Sullivan, AT; Kalweit, EL; Walterson, RA

Published Date

  • November 21, 1991

Published In

Volume / Issue

  • 27 / 24

Start / End Page

  • 2281 - 2283

International Standard Serial Number (ISSN)

  • 0013-5194

Digital Object Identifier (DOI)

  • 10.1049/el:19911410

Citation Source

  • Scopus