Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS2 Using MoO3 Thin Film as a Precursor for Coevaporation.

Journal Article (Journal Article)

Chemical vapor deposition (CVD) is a powerful method employed for high-quality monolayer crystal growth of 2D transition metal dichalcogenides with much effort invested toward improving the growth process. Here, we report a novel method for CVD-based growth of monolayer molybdenum disulfide (MoS2 ) by using thermally evaporated thin films of molybdenum trioxide (MoO3 ) as the molybdenum (Mo) source for coevaporation. Uniform evaporation rate of MoO3 thin films provides uniform Mo vapors which promote highly reproducible single-crystal growth of MoS2 throughout the substrate. These high-quality crystals are as large as 95 μm and are characterized by scanning electron microscopy, Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy, and transmission electron microscopy. The bottom-gated field-effect transistors fabricated using the as-grown single crystals show n-type transistor behavior with a good on/off ratio of 106 under ambient conditions. Our results presented here address the precursor vapor control during the CVD process and is a major step forward toward reproducible growth of MoS2 for future semiconductor device applications.

Full Text

Duke Authors

Cited Authors

  • Withanage, SS; Kalita, H; Chung, H-S; Roy, T; Jung, Y; Khondaker, SI

Published Date

  • December 2018

Published In

Volume / Issue

  • 3 / 12

Start / End Page

  • 18943 - 18949

PubMed ID

  • 31458458

Pubmed Central ID

  • PMC6643554

Electronic International Standard Serial Number (EISSN)

  • 2470-1343

International Standard Serial Number (ISSN)

  • 2470-1343

Digital Object Identifier (DOI)

  • 10.1021/acsomega.8b02978


  • eng