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Total-Ionizing-Dose Response of MoS2 Transistors With ZrO2 and h-BN Gate Dielectrics

Publication ,  Journal Article
Wang, P; Kalita, H; Krishnaprasad, A; Dev, D; O'hara, A; Jiang, R; Zhang, E; Fleetwood, DM; Schrimpf, RD; Pantelides, ST; Roy, T
Published in: IEEE Transactions on Nuclear Science
July 1, 2019

The total-ionizing-dose response of few layer MoS2 transistors with ZrO2 or h-BN gate dielectrics is investigated under various bias conditions. Defects in MoS2 and surrounding dielectric layers significantly affect radiation-induced trapping. For devices with ZrO2 dielectrics, much larger negative Vth shifts and peak transconductance degradation are observed for irradiation under negative and ground bias than under positive bias. The h-BN devices exhibit positive threshold voltage shifts under negative-bias irradiation. For both ZrO2 and h-BN passivated devices, the peak transconductance degradation results from charge trapping at the surface of the MoS2 or in nearby oxides. Changes in defect energy distributions of MoS2 FETs during X-ray irradiation are characterized via temperature-dependent low-frequency noise measurements. Density functional theory calculations are performed to provide insight into the pertinent defects.

Duke Scholars

Published In

IEEE Transactions on Nuclear Science

DOI

ISSN

0018-9499

Publication Date

July 1, 2019

Volume

66

Issue

7

Start / End Page

1584 / 1591

Related Subject Headings

  • Nuclear & Particles Physics
  • 5106 Nuclear and plasma physics
  • 0903 Biomedical Engineering
  • 0299 Other Physical Sciences
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
 

Citation

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Wang, P., Kalita, H., Krishnaprasad, A., Dev, D., O’hara, A., Jiang, R., … Roy, T. (2019). Total-Ionizing-Dose Response of MoS2 Transistors With ZrO2 and h-BN Gate Dielectrics. IEEE Transactions on Nuclear Science, 66(7), 1584–1591. https://doi.org/10.1109/TNS.2018.2885751
Wang, P., H. Kalita, A. Krishnaprasad, D. Dev, A. O’hara, R. Jiang, E. Zhang, et al. “Total-Ionizing-Dose Response of MoS2 Transistors With ZrO2 and h-BN Gate Dielectrics.” IEEE Transactions on Nuclear Science 66, no. 7 (July 1, 2019): 1584–91. https://doi.org/10.1109/TNS.2018.2885751.
Wang P, Kalita H, Krishnaprasad A, Dev D, O’hara A, Jiang R, et al. Total-Ionizing-Dose Response of MoS2 Transistors With ZrO2 and h-BN Gate Dielectrics. IEEE Transactions on Nuclear Science. 2019 Jul 1;66(7):1584–91.
Wang, P., et al. “Total-Ionizing-Dose Response of MoS2 Transistors With ZrO2 and h-BN Gate Dielectrics.” IEEE Transactions on Nuclear Science, vol. 66, no. 7, July 2019, pp. 1584–91. Scopus, doi:10.1109/TNS.2018.2885751.
Wang P, Kalita H, Krishnaprasad A, Dev D, O’hara A, Jiang R, Zhang E, Fleetwood DM, Schrimpf RD, Pantelides ST, Roy T. Total-Ionizing-Dose Response of MoS2 Transistors With ZrO2 and h-BN Gate Dielectrics. IEEE Transactions on Nuclear Science. 2019 Jul 1;66(7):1584–1591.

Published In

IEEE Transactions on Nuclear Science

DOI

ISSN

0018-9499

Publication Date

July 1, 2019

Volume

66

Issue

7

Start / End Page

1584 / 1591

Related Subject Headings

  • Nuclear & Particles Physics
  • 5106 Nuclear and plasma physics
  • 0903 Biomedical Engineering
  • 0299 Other Physical Sciences
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics