Time-resolved infrared transmittance and reflectance of a propagating melt in gaas


Journal Article

The time-resolved infrared transmittance and reflectance of a melt induced by a 10 nsec optical-laser pulse has been observed in an undoped crystalline GaAs wafer. Picosecond pulsed, 2.86 GHz repetition rate, infrared radiation from a free-electron laser was used to study the formation and propagation of the melt in real time. The back reflectance (probed from the side opposite to the incident optical radiation) displays interference oscillations as the melt propagates in the sample. The measurements are in agreement with model calculations which describe the melt with the Drude free-carrier model. © 1999 The American Physical Society.

Full Text

Duke Authors

Cited Authors

  • Keay, B; Mendenhall, M; Edwards, G

Published Date

  • January 1, 1999

Published In

Volume / Issue

  • 60 / 15

Start / End Page

  • 10898 - 10902

Electronic International Standard Serial Number (EISSN)

  • 1550-235X

International Standard Serial Number (ISSN)

  • 1098-0121

Digital Object Identifier (DOI)

  • 10.1103/PhysRevB.60.10898

Citation Source

  • Scopus