Time-resolved infrared transmittance and reflectance of a propagating melt in gaas

The time-resolved infrared transmittance and reflectance of a melt induced by a 10 nsec optical-laser pulse has been observed in an undoped crystalline GaAs wafer. Picosecond pulsed, 2.86 GHz repetition rate, infrared radiation from a free-electron laser was used to study the formation and propagation of the melt in real time. The back reflectance (probed from the side opposite to the incident optical radiation) displays interference oscillations as the melt propagates in the sample. The measurements are in agreement with model calculations which describe the melt with the Drude free-carrier model. © 1999 The American Physical Society.

Duke Scholars

Author Glenn S. Edwards Physics