Controllable bistabilities and bifurcations in a photoexcited GaAs/AlAs superlattice
Self-sustained photocurrent oscillations and bifurcation process have been demonstrated on an undoped photoexcited GaAs/AlAs superlattice. The effects of carrier density, varied by changing the laser intensity, on the transition between static and oscillating domains are investigated. Within a certain range of intermediate intensities, the time-average photocurrent vs voltage plot exhibits a controllable bistability region near the edge of the first photocurrent plateau and the oscillations disappear via a subcritical Hopf bifurcation (HB) with increasing DC bias. Below this range, the oscillations disappear via a supercritical HB, while above it, a homoclinic connection is observed.
Luo, KJ; Teitsworth, SW; Kostial, H; Grahn, HT; Ohtani, N
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