Controllable bistabilities and bifurcations in a photoexcited GaAs/AlAs superlattice


Journal Article

Self-sustained photocurrent oscillations and bifurcation process have been demonstrated on an undoped photoexcited GaAs/AlAs superlattice. The effects of carrier density, varied by changing the laser intensity, on the transition between static and oscillating domains are investigated. Within a certain range of intermediate intensities, the time-average photocurrent vs voltage plot exhibits a controllable bistability region near the edge of the first photocurrent plateau and the oscillations disappear via a subcritical Hopf bifurcation (HB) with increasing DC bias. Below this range, the oscillations disappear via a supercritical HB, while above it, a homoclinic connection is observed.

Full Text

Duke Authors

Cited Authors

  • Luo, KJ; Teitsworth, SW; Kostial, H; Grahn, HT; Ohtani, N

Published Date

  • June 21, 1999

Published In

Volume / Issue

  • 74 / 25

Start / End Page

  • 3845 - 3847

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.124199

Citation Source

  • Scopus