Synthesis of ultra-long and highly oriented silicon oxide nanowires from liquid alloys


Journal Article

Long and highly ordered amorphous silicon oxide nanowires (see Figure) have been prepared in bulk quantities by these authors. The wires formed on a Ga ball placed on top of a Si wafer, which acted as a source for the nanowires, in a quartz tube. The growth can be explained by dissolution of Si in molten Ga, followed by oxidation to SiO2, which induces the precipitation of the wires.

Full Text

Duke Authors

Cited Authors

  • Zheng, B; Wu, Y; Yang, P; Liu, J

Published Date

  • January 16, 2002

Published In

Volume / Issue

  • 14 / 2

Start / End Page

  • 122 - 124

International Standard Serial Number (ISSN)

  • 0935-9648

Digital Object Identifier (DOI)

  • 10.1002/1521-4095(20020116)14:2<122::AID-ADMA122>3.0.CO;2-V

Citation Source

  • Scopus