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Preparation, Characterization and Facile Thermolysis of [X2GaP(SiMe3)2]2 (X = Br, I) and (Cl3Ga2P)n: New Precursors to Nanocrystalline Gallium Phosphide

Publication ,  Journal Article
Aubuchon, SR; McPhail, AT; Wells, RL; Giambra, JA; Bowser, JR
Published in: Chemistry of Materials
January 1, 1994

[Br2GaP(SiMe3)2]2 and [I2GaP(SiMe3)2]2 have been prepared by the 1:1 mole ratio reaction of the corresponding gallium (III) halide with (Me3Si)3P. Direct introduction probe mass spectrometry indicates that the former product is dimeric in the gas phase; single-crystal X-ray analysis reveals that it is also dimeric in the solid state and it is isostructural with [Cl2GaP(SiMe3)2]2, but the crystals are not isomorphous. [Br2GaP(SiMe3)2]2 crystallizes in the orthorhombic system, space group Pbca, with a = 13.803(2), b = 16.652(2), c = 13.636(2) Å, V = 3134(1) Å3, Dcalc = 1.725 g cm−3 for Z = 4; the mean Ga-P bond length in the planar Ga-P-Ga-P core is 2.386 Å. Also described is the synthesis of (Cl3Ga2P)n via the 2:1 mole ratio reaction of GaCl3 and (Me3Si)3P. All of the title compounds undergo thermolysis at relatively low temperature to yield nanocrystalline GaP. Thermolysis has been studied by thermal gravimetric analysis, and the resultant air-stable powders have been characterized by X-ray diffraction and elemental analysis. © 1994, American Chemical Society. All rights reserved.

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Published In

Chemistry of Materials

DOI

EISSN

1520-5002

ISSN

0897-4756

Publication Date

January 1, 1994

Volume

6

Issue

1

Start / End Page

82 / 86

Related Subject Headings

  • Materials
  • 40 Engineering
  • 34 Chemical sciences
  • 09 Engineering
  • 03 Chemical Sciences
 

Citation

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Aubuchon, S. R., McPhail, A. T., Wells, R. L., Giambra, J. A., & Bowser, J. R. (1994). Preparation, Characterization and Facile Thermolysis of [X2GaP(SiMe3)2]2 (X = Br, I) and (Cl3Ga2P)n: New Precursors to Nanocrystalline Gallium Phosphide. Chemistry of Materials, 6(1), 82–86. https://doi.org/10.1021/cm00037a018
Aubuchon, S. R., A. T. McPhail, R. L. Wells, J. A. Giambra, and J. R. Bowser. “Preparation, Characterization and Facile Thermolysis of [X2GaP(SiMe3)2]2 (X = Br, I) and (Cl3Ga2P)n: New Precursors to Nanocrystalline Gallium Phosphide.” Chemistry of Materials 6, no. 1 (January 1, 1994): 82–86. https://doi.org/10.1021/cm00037a018.
Aubuchon SR, McPhail AT, Wells RL, Giambra JA, Bowser JR. Preparation, Characterization and Facile Thermolysis of [X2GaP(SiMe3)2]2 (X = Br, I) and (Cl3Ga2P)n: New Precursors to Nanocrystalline Gallium Phosphide. Chemistry of Materials. 1994 Jan 1;6(1):82–6.
Aubuchon, S. R., et al. “Preparation, Characterization and Facile Thermolysis of [X2GaP(SiMe3)2]2 (X = Br, I) and (Cl3Ga2P)n: New Precursors to Nanocrystalline Gallium Phosphide.” Chemistry of Materials, vol. 6, no. 1, Jan. 1994, pp. 82–86. Scopus, doi:10.1021/cm00037a018.
Aubuchon SR, McPhail AT, Wells RL, Giambra JA, Bowser JR. Preparation, Characterization and Facile Thermolysis of [X2GaP(SiMe3)2]2 (X = Br, I) and (Cl3Ga2P)n: New Precursors to Nanocrystalline Gallium Phosphide. Chemistry of Materials. 1994 Jan 1;6(1):82–86.
Journal cover image

Published In

Chemistry of Materials

DOI

EISSN

1520-5002

ISSN

0897-4756

Publication Date

January 1, 1994

Volume

6

Issue

1

Start / End Page

82 / 86

Related Subject Headings

  • Materials
  • 40 Engineering
  • 34 Chemical sciences
  • 09 Engineering
  • 03 Chemical Sciences