Ballistic electrons in an inhomogeneous submicron structure: Thermal and contact effects

Published

Journal Article

For a simple submicron semiconductor structure we have calculated exactly the electron distribution f(v,x) within a relaxation-to-local-equilibrium assumption for the collision term of the Boltzmann equation. This is the first calculation of the electron distribution in an inhomogeneous semiconductor. Large applied voltages produce a substantial ballistic peak in f(v,x). But at all voltages contact inhomogeneities and local heating (and cooling) produce an I-V characteristic only weakly dependent on the scattering rate. © 1984 The American Physical Society.

Full Text

Duke Authors

Cited Authors

  • Baranger, HU; Wilkins, JW

Published Date

  • January 1, 1984

Published In

Volume / Issue

  • 30 / 12

Start / End Page

  • 7349 - 7351

International Standard Serial Number (ISSN)

  • 0163-1829

Digital Object Identifier (DOI)

  • 10.1103/PhysRevB.30.7349

Citation Source

  • Scopus