Ballistic electrons in a submicron structure: The distribution function and two valley effects

Published

Journal Article

We have solved the Boltzman equation for a submicron N+-N--N+ GaAs structure within a two-valley model using energy-dependent relaxation times. Ballistic electrons produce a large peak in the velocity-distribution function throughout much of the N- region. Transfer of electrons from the lower to upper valley in the N- layer causes an accumulation of charge near the collecting N+ region. Transfer of electrons back from the upper to the lower valley in the collecting N+ region creates two new peaks in the distribution function which we call ballistic electron echoes. © 1985.

Full Text

Duke Authors

Cited Authors

  • Baranger, HU; Wilkins, JW

Published Date

  • January 1, 1985

Published In

Volume / Issue

  • 134 / 1-3

Start / End Page

  • 470 - 474

International Standard Serial Number (ISSN)

  • 0378-4363

Digital Object Identifier (DOI)

  • 10.1016/0378-4363(85)90389-4

Citation Source

  • Scopus