Random Berry phase magnetoresistance as a probe of interface roughness in Si MOSFET’s

Published

Journal Article

The effect of silicon-oxide interface roughness on the weak-localization magnetoconductance of a silicon metal-oxide-semiconductor field-effect transistor in a magnetic field, tilted with respect to the interface, is studied. It is shown that an electron picks up a random Berry’s phase as it traverses a closed orbit. Effectively, due to roughness, the electron sees a uniform field parallel to the interface as a random perpendicular field. At zero parallel field the dependence of the conductance on the perpendicular field has a well-known form, the weak-localization line shape. Here the effect of applying a fixed parallel field on the line shape is analyzed. Many types of behavior are found including homogeneous broadening, inhomogeneous broadening, and a remarkable regime in which the change in line shape depends only on the magnetic field, the two length scales that characterize the interface roughness, and fundamental constants. Good agreement is obtained with experiments that are in the homogeneous broadening limit. The implications for using weak-localization magnetoconductance as a probe of interface roughness, as proposed by Wheeler and co-workers, are discussed. © 2001 The American Physical Society.

Full Text

Duke Authors

Cited Authors

  • Mathur, H; Baranger, HU

Published Date

  • January 1, 2001

Published In

Volume / Issue

  • 64 / 23

Electronic International Standard Serial Number (EISSN)

  • 1550-235X

International Standard Serial Number (ISSN)

  • 1098-0121

Digital Object Identifier (DOI)

  • 10.1103/PhysRevB.64.235325

Citation Source

  • Scopus