Kinetics of laser‐induced liquid metal etching of a‐Si films


Journal Article

It ist demonstrated that spatially modulated laser pulse‐induced melting of semiconductor/metal films can be used to generate micropatterns in semiconductors. The kinetics of the phase transitions are traced by time‐resolved electron microscopy down to specimen areas of 0.5 μm Ø. In the case of a‐Si/Al films crystallization of a‐Si, formation of Al‐silicides and transport of material by liquid motion are observed. These processes proceeded with velocities of some 10 m/s. Copyright © 1985 WILEY‐VCH Verlag GmbH & Co. KGaA

Full Text

Duke Authors

Cited Authors

  • Bostanjoglo, O; Endruschat, E; Tornow, W

Published Date

  • January 1, 1985

Published In

Volume / Issue

  • 90 / 2

Start / End Page

  • 457 - 462

Electronic International Standard Serial Number (EISSN)

  • 1521-396X

International Standard Serial Number (ISSN)

  • 0031-8965

Digital Object Identifier (DOI)

  • 10.1002/pssa.2210900207

Citation Source

  • Scopus