Nanosecond-exposure electron microscopy of laser-induced phase transformations


Journal Article

Flash electron microscopy with exposure times of 10-20 ns was realized by installing a beam-blanking unit and a gated image intensifier in a commercial TEM. This technique was applied to laser-induced phase transitions in amorphous Ge films. Intermediate stages of explosive crystallization were visualized for the first time, such as radial growth of crystal by propagation of a mostly flat phase boundary 100-600 ns after the laser pulse, succeeded by a helical growth after a delay of 1.5 μs. Three mechanisms responsible for the removal of material during perforation of the film, i.e. film flow, evaporation and explosive fragmentation, were also visualized. © 1987.

Full Text

Duke Authors

Cited Authors

  • Bostanjoglo, O; Tornow, RP; Tornow, W

Published Date

  • January 1, 1987

Published In

Volume / Issue

  • 21 / 4

Start / End Page

  • 367 - 372

International Standard Serial Number (ISSN)

  • 0304-3991

Digital Object Identifier (DOI)

  • 10.1016/0304-3991(87)90034-9

Citation Source

  • Scopus