Increasing the lifetime of avalanche transistors by cryogenic cooling

Published

Journal Article

Operating the transistors 2N 5551 in the high voltage avalanche mode at 77 K increases their lifetime by a factor of at least 30. This improvement is due to an increased charged carrier mobility and thermal diffusivity at low temperatures which results in a substantial reduction of charge storage time tau (77 K)/ tau (300 K) approximately=(50 ns)/(450 ns) and efficient thermal sinking. Negative effects of cooling are a decrease in the collector-base breakdown voltage Vb(77 K)/Vb(300 K) approximately=(300 V)/(380 V) and an increase in the base-emitter threshold voltage from 0.6 V at 300 K to 1.0 V at 77 K.

Full Text

Duke Authors

Cited Authors

  • Bostanjoglo, O; Tornow, W

Published Date

  • December 1, 1987

Published In

Volume / Issue

  • 2 / 3

Start / End Page

  • 175 - 176

International Standard Serial Number (ISSN)

  • 0268-1242

Digital Object Identifier (DOI)

  • 10.1088/0268-1242/2/3/007

Citation Source

  • Scopus