Nonlinear current-voltage characteristics and spontaneous current oscillations in p-Ge
Journal Article (Journal Article)
We report an experimental measurement of nonlinear dc current-voltage (I-V) characteristics in p-type Ge extrinsic photoconductors at liquid He temperatures which exhibit a region of voltage-controlled negative differential resistance (NDR) above the threshold for impurity breakdown, accompanied by a spontaneous current oscillation of frequency f ∼ 5 to 10 kHz. The dc I-V characteristics are well explained in terms of a simple rate equation model and, it is argued, the spontaneous current oscillations are due to moving space charge waves which arise from a negative differential rate of impurity impact ionization. © 1986. s
Full Text
Duke Authors
Cited Authors
- Teitsworth, SW; Westervelt, RM
Published Date
- January 1, 1986
Published In
Volume / Issue
- 23 / 1-3
Start / End Page
- 181 - 186
International Standard Serial Number (ISSN)
- 0167-2789
Digital Object Identifier (DOI)
- 10.1016/0167-2789(86)90126-0
Citation Source
- Scopus