Analytic Boltzmann equation approach for negative differential mobility in two-valley semiconductors


Journal Article

We present results for the negative differential mobility and the distribution function in GaAs and InP for electric fields less than 40 kV/cm based on the analytic solution of the Boltzmann equation for a model with two valleys and three relaxation times. Using the measured low field mobility, lower valley mass, and valley separation energy Δ while adjusting three upper valley parameters, we obtain good agreement with the experimental velocity-field curves. The distribution function in the lower valley shows structure at energies ≊Δ due to the intervalley scattering.

Full Text

Duke Authors

Cited Authors

  • Stanton, CJ; Baranger, HU; Wilkins, JW

Published Date

  • December 1, 1986

Published In

Volume / Issue

  • 49 / 3

Start / End Page

  • 176 - 178

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.97216

Citation Source

  • Scopus