Resonant tunneling into a biased fractional quantum Hall edge


Journal Article

The voltage dependence of a new type of resonance at a sharp fractional quantum Hall effect (FQHE) edge was characterized. Clear non-Fermi liquid (non-FL) behavior through line shape analysis and nonconservation of resonance area was demonstrated.

Full Text

Duke Authors

Cited Authors

  • Tsui, DC; Pfeiffer, LN; West, KW; Grayson, M; Chang, AM

Published Date

  • March 19, 2001

Published In

Volume / Issue

  • 86 / 12

Start / End Page

  • 2645 - 2648

International Standard Serial Number (ISSN)

  • 0031-9007

Digital Object Identifier (DOI)

  • 10.1103/PhysRevLett.86.2645

Citation Source

  • Scopus