Tunneling current noise in thin gate oxides

Published

Journal Article

We have examined fluctuations in the tunneling current of 3.5 nm SiO2 barriers for voltages in the direct tunneling regime. We find a 1/f power law for the spectral density of the fluctuations where f is the frequency. This 1/f noise can be attributed to fluctuations of a trap assisted tunneling current through the oxide that causes current noise but is not evident in the I-V curves. We suggest that this noise may be a more sensitive probe of trap assisted tunneling and degradation in thin oxides than other measures. At voltages above a threshold of 2.5 V, we observe the reversible onset of non-Gaussian current transients in the noise. The onset of these current transients can be related to a transition in the spacial uniformity of the tunneling current density that may result in eventual breakdown of the oxide. © 1996 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Alers, GB; Krisch, KS; Monroe, D; Weir, BE; Chang, AM

Published Date

  • November 4, 1996

Published In

Volume / Issue

  • 69 / 19

Start / End Page

  • 2885 - 2887

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.117351

Citation Source

  • Scopus