Observation of phase-shift locking of the Aharonov-Bohm effect in doubly connected GaAsAlxGa1-xAs heterostructure devices


Journal Article

We have observed a tendency toward locking of the Aharonov-Bohm effect phase shift, in doubly connected, quasi-one-dimensional GaAsAlxGa1-xAs devices. The resistances of adjacent segments within a device exhibit periodic modulations, due to magnetic flux penetrating the area enclosed by the doubly connected geometry, which are phase-shifted from each other by a value of close to 180°. This phase shift value persists over a range of 200 periods (∼4kGauss in magnetic field), and is observed for various current-voltage configurations. © 1988.

Full Text

Duke Authors

Cited Authors

  • Chang, AM; Owusu-Sekyere, K; Chang, TY

Published Date

  • January 1, 1988

Published In

Volume / Issue

  • 67 / 11

Start / End Page

  • 1027 - 1030

International Standard Serial Number (ISSN)

  • 0038-1098

Digital Object Identifier (DOI)

  • 10.1016/0038-1098(88)91179-9

Citation Source

  • Scopus