Quantum size effect in monolayer-doped heterostructures

Published

Journal Article

We report molecular-beam-epitaxial growth of a new structure formed by monolayer doping the barrier of an AlxGa1-xAs-GaAs heterojunction. Our investigations of these structures include the quantum Hall effect and variable temperature mobility measurements, which reveal enhancements in interface densities are achievable along with very high mobility. © 1988 The American Physical Society.

Full Text

Duke Authors

Cited Authors

  • Cunningham, JE; Tsang, WT; Timp, G; Schubert, EF; Chang, AM; Owusu-Sekyere, K

Published Date

  • January 1, 1988

Published In

Volume / Issue

  • 37 / 8

Start / End Page

  • 4317 - 4320

International Standard Serial Number (ISSN)

  • 0163-1829

Digital Object Identifier (DOI)

  • 10.1103/PhysRevB.37.4317

Citation Source

  • Scopus