Fabrication of gatable submicron channels in Alx Ga 1-x As-GaAs heterostructures
Publication
, Journal Article
Owusu-Sekyere, K; Chang, AM; Chang, TY
Published in: Applied Physics Letters
December 1, 1988
A new, simplified process has been developed for fabricating submicron AlxGa1-xAs-GaAs heterostructure devices for low-temperature transport studies, with the advantage of gatability. This process utilizes electron beam lithography, photolithography, and wet etching techniques to laterally confine the two-dimensional electron gas, and possesses the unique feature that the metal etch mask for the electron beam defined narrow section is deposited directly on top of the heterostructure surface, allowing for use as a gate. Devices of lithographic widths from 0.4 to 2.0 μm have been successfully fabricated, where the 0.4 μm devices of both enhancement and depletion modes have been demonstrated to function down to 0.35 K in temperature.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1988
Volume
52
Issue
15
Start / End Page
1246 / 1248
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Owusu-Sekyere, K., Chang, A. M., & Chang, T. Y. (1988). Fabrication of gatable submicron channels in Alx Ga 1-x As-GaAs heterostructures. Applied Physics Letters, 52(15), 1246–1248. https://doi.org/10.1063/1.99170
Owusu-Sekyere, K., A. M. Chang, and T. Y. Chang. “Fabrication of gatable submicron channels in Alx Ga 1-x As-GaAs heterostructures.” Applied Physics Letters 52, no. 15 (December 1, 1988): 1246–48. https://doi.org/10.1063/1.99170.
Owusu-Sekyere K, Chang AM, Chang TY. Fabrication of gatable submicron channels in Alx Ga 1-x As-GaAs heterostructures. Applied Physics Letters. 1988 Dec 1;52(15):1246–8.
Owusu-Sekyere, K., et al. “Fabrication of gatable submicron channels in Alx Ga 1-x As-GaAs heterostructures.” Applied Physics Letters, vol. 52, no. 15, Dec. 1988, pp. 1246–48. Scopus, doi:10.1063/1.99170.
Owusu-Sekyere K, Chang AM, Chang TY. Fabrication of gatable submicron channels in Alx Ga 1-x As-GaAs heterostructures. Applied Physics Letters. 1988 Dec 1;52(15):1246–1248.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1988
Volume
52
Issue
15
Start / End Page
1246 / 1248
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences