Quantum transport in quasi-one-dimensional GaAsAlxGa1-xAs heterostructure devices

Published

Journal Article

We study quantum transport properties of narrow GaAsAlxGa1-xAs wires and rings made by electron beam lithography. At low temperatures, clear signatures of Ah╠üaronov-Bohm quantum interference effects are observed due to the application of a perpendicular magnetic field. The ring devices show large amplitude (-5%) resistance oscillations periodic in magnetic flux penetrating the ring, which diminish in amplitude above -3kG. The wire devices show aperiodic resistance fluctuations as large as 100%, which persist into the quantum Hall regime. The large amplitudes observed result from the small number of transverse channels occupied below the Fermi level. © 1988.

Full Text

Duke Authors

Cited Authors

  • Chang, AM; Timp, G; Howard, RE; Behringer, RE; Mankeiwich, PM; Cunningham, JE; Chang, TY; Chelluri, B

Published Date

  • January 1, 1988

Published In

Volume / Issue

  • 4 / 4-5

Start / End Page

  • 515 - 520

Electronic International Standard Serial Number (EISSN)

  • 1096-3677

International Standard Serial Number (ISSN)

  • 0749-6036

Digital Object Identifier (DOI)

  • 10.1016/0749-6036(88)90229-7

Citation Source

  • Scopus