Quantum transport in quasi-one-dimensional GaAsAlxGa1-xAs heterostructure devices
Published
Journal Article
We study quantum transport properties of narrow GaAsAlxGa1-xAs wires and rings made by electron beam lithography. At low temperatures, clear signatures of Ah́aronov-Bohm quantum interference effects are observed due to the application of a perpendicular magnetic field. The ring devices show large amplitude (-5%) resistance oscillations periodic in magnetic flux penetrating the ring, which diminish in amplitude above -3kG. The wire devices show aperiodic resistance fluctuations as large as 100%, which persist into the quantum Hall regime. The large amplitudes observed result from the small number of transverse channels occupied below the Fermi level. © 1988.
Full Text
Duke Authors
Cited Authors
- Chang, AM; Timp, G; Howard, RE; Behringer, RE; Mankeiwich, PM; Cunningham, JE; Chang, TY; Chelluri, B
Published Date
- January 1, 1988
Published In
Volume / Issue
- 4 / 4-5
Start / End Page
- 515 - 520
Electronic International Standard Serial Number (EISSN)
- 1096-3677
International Standard Serial Number (ISSN)
- 0749-6036
Digital Object Identifier (DOI)
- 10.1016/0749-6036(88)90229-7
Citation Source
- Scopus