Two-dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by chemical beam epitaxy

Published

Journal Article

Shubnikov-de Haas, quantum Hall effect, and cyclotron resonance measurements revealed the existence of a high mobility, two-dimensional electron gas at the Ga0.47In0.53As/InP heterointerface grown by chemical beam epitaxy. Enhanced electron mobilities were as high as ∼130×103 cm2/V s at 4.2 K. A striking feature in the data which also indicates that the sample is of high quality is the large number of Shubnikov-de Haas oscillation periods observed. Oscillations were observable up to a Landau filling factor of around 50, corresponding to a Landau level index of 25.

Full Text

Duke Authors

Cited Authors

  • Tsang, WT; Chang, AM; Ditzenberger, JA; Tabatabaie, N

Published Date

  • December 1, 1986

Published In

Volume / Issue

  • 49 / 15

Start / End Page

  • 960 - 962

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.97495

Citation Source

  • Scopus