Temperature dependence of the quantized Hall effect


Journal Article

We reported detailed measurements of the temperature dependence of the quantized Hall effect from 4.2 to 50 K in the i=2 plateau region in InGaAs-InP. We deduce from the data that there is a significant density of localized states between the two Landau levels, with a value of 1×1010 cm-2 meV-1 at the middle of the mobility gap. We also found that the correlations between xx and xy show the trend predicted by the recent two-parameter scaling theory of localization in quantized Hall effect. © 1985 The American Physical Society.

Full Text

Duke Authors

Cited Authors

  • Wei, HP; Chang, AM; Tsui, DC; Razeghi, M

Published Date

  • January 1, 1985

Published In

Volume / Issue

  • 32 / 10

Start / End Page

  • 7016 - 7019

International Standard Serial Number (ISSN)

  • 0163-1829

Digital Object Identifier (DOI)

  • 10.1103/PhysRevB.32.7016

Citation Source

  • Scopus