Higher-order states in the multiple-series, fractional, quantum hall effect


Journal Article

We report results on the fractional quantum Hall effect in GaAs-AlxGa1-xAs heterostructures at fractional Landau-level filling factor 1/2=pq obtained with the combination of a dilution refrigerator and the National Magnet Laboratory hybrid magnet. We establish conclusively the quantiztation of the higher-order states p in the series q. The Hall resistance is accurately quantized to 2.3 parts in 104 for the 25 state and 1.3 in 103 for the 35 state. New structures are observed near 1/2=37, 47, 49, and 59. © 1984 The American Physical Society.

Full Text

Duke Authors

Cited Authors

  • Chang, AM; Berglund, P; Tsui, DC; Stormer, HL; Hwang, JCM

Published Date

  • January 1, 1984

Published In

Volume / Issue

  • 53 / 10

Start / End Page

  • 997 - 1000

International Standard Serial Number (ISSN)

  • 0031-9007

Digital Object Identifier (DOI)

  • 10.1103/PhysRevLett.53.997

Citation Source

  • Scopus